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Unformatted text preview: Spring 2001 6.012 Microelectronic Devices and Circuits Prof. J. A. del Alamo May 24, 2001- Final Exam problem grade Name: Recitation: total General guidelines (please read carefully before starting): • Make sure to write your name on the space designated above. • Open book : you can use any material you wish. • All answers should be given in the space provided. Please do not turn in any extra material. If you need more space, use the back page. • You have 180 minutes to complete your exam. • Unless stated otherwise, assume room temperature. • Make reasonable approximations and state them , i.e. quasi-neutrality, depletion approxima- tion, etc. • Partial credit will be given for setting up problems without calculations. NO credit will be given for answers without reasons. • Use the symbols utilized in class for the various physical parameters, i.e. µ n , I D , E , etc. • Every numerical answer must have the proper units next to it. Points will be subtracted for answers without units or with wrong units. • Use φ = 0 at n o = p o = n i as potential reference. • Use the following fundamental constants and physical parameters for silicon and silicon dioxide at room temperature: − 3 n i = 1 × 10 10 cm kT /q = 0 . 025 V q = 1 . 60 × 10 − 19 C s = 1 . 05 × 10 − 12 F/cm ox = 3 . 45 × 10 − 13 F/cm 1 2 3 4 5 1. (15 points) The figure below shows the measured transconductance characteristics of the n- channel MOSFET that you characterized in Device Characterization Project #2 . Each of the lines represents a different value of V DS , starting with V DS,min = 0 . 25 V , in steps...
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This note was uploaded on 07/20/2009 for the course ELECTRICAL 6.012 taught by Professor Prof.jesúsdelalamo during the Fall '05 term at MIT.
- Fall '05