hw5 - Fall 2005 6.012 Microelectronic Devices and Circuits...

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Fall 2005 6.012 Microelectronic Devices and Circuits Prof. J. A. del Alamo Homework #5 - October 14, 2005 Due: October 21, 2005 at recitation 2 PM latest) (late homework will not be accepted) Please write your recitation session time on your problem set solution. 1. [20 points] Consider the output I-V characteristics of an n-MOSFET for V SB = 0 below. The device has a gate length L g =1 μm and a gate oxide thickness x ox =10 nm . The output characteristics have been normalized for a unity width device. a) Estimate the threshold voltage of the device. b) Estimate the mobility of the electron inversion layer. c) Estimate the transconductance g m at a bias of V GS =3 V , and V DS =3 V for W g = 10 μm . d) At a bias of V GS =3 V , and V DS =3 V , estimate the gate-source capacitance C gs of a W g =10 μm device. 2. [20 points] Consider an n-MOSFET with an n + -polySi gate characterized by the following parameters: L =1 μm , W =5 μm , x ox =20 nm , N a =10 17 cm - 3 . The device is biased (
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with V GS =3 V , V DS =4 V and V BS =0 V . Assume μ n = 400 cm 2 /V · s for electrons in the inversion layer.
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This note was uploaded on 07/20/2009 for the course ELECTRICAL 6.012 taught by Professor Prof.jesúsdelalamo during the Fall '05 term at MIT.

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hw5 - Fall 2005 6.012 Microelectronic Devices and Circuits...

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