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hw6 - Fall 2005 6.012 Microelectronic Devices and Circuits...

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Fall 2005 6.012 Microelectronic Devices and Circuits Prof. J. A. del Alamo Homework #6 - October 21, 2005 Due: October 28, 2005 at recitation 2 PM latest) (late homework will not be accepted) Please write your recitation session time on your problem set solution. 1. [20 points] Consider an n-channel MOSFET in the saturation regime. a) Derive expressions and sketch the spatial dependence of V c ( y ), E y ( y ), v n ( y ), and Q n ( y ) from source to drain. Explain your results. b) Obtain an expression for the transit time of electrons through the channel from source to drain by computing: τ t = L 0 dt = L 0 dy v n ( y ) 2. [35 points] Consider a MOSFET that consists of a n + -poly Si gate, a 55 ˚ A silicon dioxide dielectric on a N A = 3 × 10 17 cm - 3 p-type substrate. The gate length is 0.5 μm and the gate width is 2 μm . The inversion layer mobility is 700 cm 2 /V.s . Derive a complete high-frequency small-signal equivalent circuit model for this transistor for V GS = 2 V, V DS = 4 V, and V SB = 1 V. The source and drain junction areas are 6 μm 2 each. The overlap capacitance is 0.2 fF/
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