# hw8 - Fall 2005 6.012 Microelectronic Devices and Circuits...

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Fall 2005 6.012 Microelectronic Devices and Circuits Prof. J. A. del Alamo Homework #8 ­ November 4, 2005 Due: November 10, 2005 at lecture ( noon latest) (late homework will not be accepted) Please write your recitation session time on your problem set solution. 1. [30 points] Below is a sketch not to scale of the minority carrier distribution across the quasi­neutral regions of a forward­biased p­n diode. For this diode, W p x p = 10 µm , W n x n = 10 µm , D n = 25 cm 2 /s , and D p = 10 cm 2 /s . The area of the junction is 5 µm . p p(x n )=10 14 cm -3 p(x) n i 2 N d n n(-x p )=10 13 cm -3 n(x) n i 2 N a p-side n-side x -W p -x p x n W n a) Calculate the hole current injected into the n­side of the diode.± b) Calculate the electron current injected into the p­side of the diode.± c) Calculate the diffusion capacitance associated with carrier storage on the n­side of the ± diode. d) Calculate the diffusion capacitance associated with carrier storage on the p­side of the diode. e) How much should the voltage across the junction increase if we wish to double the total current through the diode?

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• Fall '05
• Prof.JesúsdelAlamo
• Trigraph, Wn, µm, diffusion capacitance, µm stepsize

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