lec6 - 6.012 - Microelectronic Devices and Circuits - Fall...

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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 6-1 Lecture 6 - PN Junction and MOS Electrostatics (III) Electrostatics of pn Junction under Bias September 27, 2005 Contents : 1. electrostatics of pn junction under bias 2. depletion capacitance Reading assignment: Howe and Sodini, Ch. 3, §§ 3.5-3.6
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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 6-2 Key questions What happens to the electrostatics of a pn junction if a voltage is applied across its terminals? Why does a pn junction behave in some way like a capacitor?
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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 6-3 1. Electrostatics of pn junction under bias Bias convention for pn junction: p n V + - V> 0 forward bias V< 0 reverse bias
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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 6-4 Potential distribution across pn junction in thermal equilibrium: x φ φ B 0 x no -x po p - + n p-QNR n-QNR SCR φ mp φ mn Apply voltage to p-side with respect to n-side: x φ φ B 0 x no -x po p - + n p-QNR n-QNR SCR V V + - Battery imposes a potential difference across diode
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Lecture 6-5 How does potential distribution inside junction change as a result of bias? x φ p - + n p-QNR n-QNR SCR V V ? V=0 V>0 + - Five regions where V can drop: metal/p-QNR contact? p-QNR? SCR? n-QNR? metal/n-QNR contact? In which region does V drop most? Or, how is
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This note was uploaded on 07/20/2009 for the course ELECTRICAL 6.012 taught by Professor Prof.jesúsdelalamo during the Fall '05 term at MIT.

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lec6 - 6.012 - Microelectronic Devices and Circuits - Fall...

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