lec17 - 6.012 - Microelectronic Devices and Circuits - Fall...

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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 17-1 Lecture 17 - The Bipolar Junction Transistor (I) Forward Active Regime November 8, 2005 Contents : 1. BJT: structure and basic operation 2. I-V characteristics in forward active regime Reading assignment: Howe and Sodini, Ch. 7, §§ 7.1, 7.2 Announcements: Quiz 2: 11/16, 7:30-9:30 PM, open book, must bring calculator; lectures #10-18.
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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 17-2 Key questions What does a bipolar junction transistor look like? How does a bipolar junction transistor operate? What are the leading dependencies of the terminal currents of a BJT in the forward active regime?
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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 17-3 1. BJT: structure and basic operation emitter contact base contact base contact collector contact n + emitter p base n collector n + buried layer n + plug base-emitter junction (area A E ) emitter-stripe width emitter-stripe length base-collector junction collector-substrate junction p substrate "intrinsic" BJT Uniqueness of BJT: high-current drivability per input ca- pacitance fast excellent for analog and front-end communications applications.
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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 17-4 Simplifed one-dimensional model oF intrinsic device: Emitter Base Collector I E I B I C n p n N aB W B -X BE W B +X BC W B +X BC +W C -W E -X BE N dE V BE V BC N dC + - + - x 0 BJT = two neighbouring pn junctions back-to-back: close enough For minority carriers to interact (can diffuse quickly through base)
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This note was uploaded on 07/20/2009 for the course ELECTRICAL 6.012 taught by Professor Prof.jesúsdelalamo during the Fall '05 term at MIT.

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lec17 - 6.012 - Microelectronic Devices and Circuits - Fall...

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