lec26 - 6.012 Microelectronic Devices and Circuits Fall...

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Unformatted text preview: 6.012 Microelectronic Devices and Circuits Fall 2005 Lecture 261 Lecture 26 6.012 Wrapup December 13, 2005 Contents : 1. 6.012 wrapup Announcements: exam TA review session: December 16, 7:309:30 PM, Final exam: December 19, 1:304:30 PM, duPont; open book, calculator required; entire subject under examina tion but emphasis on lectures #1926. Final 6.012 Microelectronic Devices and Circuits Fall 2005 Lecture 262 1. Wrap up of 6.012 The amazing properties of Si two types of carriers: electrons and holes however, can make good electronic devices with just one, i.e. MESFET (MetalSemiconductor Field Effect Transistor), or HEMT (High Electron Mo bility Transistor) but, cant do complementary logic (i.e. CMOS) without two 6.012 Microelectronic Devices and Circuits Fall 2005 Lecture 263 carrier concentrations can be controlled by addition of dopants over many orders of magnitude (about 20!) and in short length scales ( nm range) 37 nm gate length MOSFET from Intel (IEDM 05). Image removed due to copyright restrictions. 6.012 Microelectronic Devices and Circuits Fall 2005 Lecture 264 carrier concentrations can be controlled electrostati cally over many orders of magnitude (easily 10!) 6.012 Microelectronic Devices and Circuits Fall 2005 Lecture 265 carriers are fast: electrons can cross L = 0 . 1 m in about: L . 1 m = = 10 7 cm/s = 1 ps v e high current density: J e = qnv e = 1 . 6 10 19 C 10 17 cm 3 10 7 cm/s = 1 . 6 10 5 A/cm 2 high current drivability to capacitance ratio extraordinary physical and chemical properties can control doping over 8 orders of magnitude (p type and n type) can make very low resistance ohmic contacts can effectively isolate devices by means of pn junc tions, trenches and SOI 6.012 Microelectronic Devices and Circuits Fall 2005 Lecture 266 The amazing properties of Si MOSFET source gate body polysilicon gate p p + n + n + n + drain gate oxide inversion layer n channel ideal properties of Si/SiO...
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lec26 - 6.012 Microelectronic Devices and Circuits Fall...

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