lecture7annotat - 6.012 - Microelectronic Devices and...

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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 7-1 Lecture 7 - PN Junction and MOS Electrostatics (IV) Electrostatics of Metal-Oxide-Semiconductor Structure September 29, 2005 Contents : 1. Introduction to MOS structure 2. Electrostatics of MOS at zero bias 3. Electrostatics of MOS under bias Reading assignment: Howe and Sodini, Ch. 3, §§ 3.7-3.8
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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 7-2 Key questions What is the big deal about the metal-oxide-semiconductor structure? What do the electrostatics of the MOS structure look like at zero bias? How do the electrostatics of the MOS structure get modified if a voltage is applied across its terminals?
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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 7-3 1. Introduction Metal-Oxide-Semiconductor structure: metal interconnect to bulk metal interconnect to gate n + polysilicon gate gate oxide ε ox = 3.9 ε o p-type ε s = 11.7 ε o x 0 MOS at the heart of the electronics revolution: Digital and analog functions : Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is key element of circuit family Memory function : Dynamic Random Access Mem- ory (DRAM) and Flash Erasable Programmable Mem- Imaging : Charge-Couple Device (CCD) camera Displays : Active-Matrix Liquid-Crystal Displays ... (MOSFET) (CMOS) (DRAM) (EPROM)
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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 7-4 2. MOS electrostatics at zero bias Idealized 1D structure: "metal" (n + polySi) oxide semiconductor (p type) contact contact x 0 -t ox Metal: does not tolerate volume charge charge can only exist at its surface Oxide: insulator no volume charge (no free carriers, no dopants) Semiconductor: can have volume charge (SCR) semiconductor.
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This note was uploaded on 07/20/2009 for the course ELECTRICAL 6.012 taught by Professor Prof.jesúsdelalamo during the Fall '05 term at MIT.

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lecture7annotat - 6.012 - Microelectronic Devices and...

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