lecture26annotat

lecture26annotat - 6.012- MicroelectronicDevicesandCircuits-

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Unformatted text preview: 6.012- MicroelectronicDevicesandCircuits- Fall2005Lecture26-1Lecture26- 6.012Wrap-upDecember13,2005Contents:1.6.012wrap-upAnnouncements:examTAreviewsession:December16,7:30-9:30PM,Finalexam:December19,1:30-4:30PM,duPont;openbook,calculatorrequired;entiresubjectunderexamina-tionbutemphasisonlectures#19-26.Final6.012- MicroelectronicDevicesandCircuits- Fall2005Lecture26-21.Wrapupof6.0122TheamazingpropertiesofSitwotypesofcarriers:electronsandholeshowever,canmakegoodelectronicdeviceswithjustone,i.e.MESFET(Metal-SemiconductorField-EffectTransistor),orHEMT(HighElectronMo-bilityTransistor)but,cantdocomplementarylogic(i.e.CMOS)withouttwo6.012- MicroelectronicDevicesandCircuits- Fall2005Lecture26-3carrierconcentrationscanbecontrolledbyadditionofdopantsovermanyordersofmagnitude(about20!)andinshortlengthscales(nmrange)37nmgatelengthMOSFETfromIntel(IEDM05)Image removed due to copyright restrictions.6.012- MicroelectronicDevicesandCircuits- Fall2005Lecture26-4carrierconcentrationscanbecontrolledelectrostati-callyovermanyordersofmagnitude(easily10!)6.012- MicroelectronicDevicesandCircuits- Fall2005Lecture26-5carriersarefast:electronscancrossL= 0.1minabout:L.1m==107cm/s= 1psvehighcurrentdensity:3Je=qnve= 1.61019C1017cm107cm/s= 1.6105A/cm2highcurrentdrivabilitytocapacitanceratioextraordinaryphysicalandchemicalpropertiescancontroldopingover8ordersofmagnitude(ptypeandntype)canmakeverylowresistanceohmiccontactscaneffectivelyisolatedevicesbymeansofpnjunc-tions,trenchesandSOI6.012- MicroelectronicDevicesandCircuits- Fall2005Lecture26-62TheamazingpropertiesofSiMOSFETsource gate body polysilicon gate p p+ n+n+ n+ drain gate oxide inversion layer n channel idealpropertiesofSi/SiO2interface:candrivesurfaceallthewayfromaccumulationtoinversion(carrierdensitymodulationover16ordersofmagnitude)notpossibleinGaAs,forexample6.012- MicroelectronicDevices...
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This note was uploaded on 07/20/2009 for the course ELECTRICAL 6.012 taught by Professor Prof.jesúsdelalamo during the Fall '05 term at MIT.

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lecture26annotat - 6.012- MicroelectronicDevicesandCircuits-

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