q1_fall05

# q1_fall05 - Fall 2005 6.012 Microelectronic Devices and...

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Fall 2005 6.012 Microelectronic Devices and Circuits Prof. J. A. del Alamo October 13, 2005 ­ Quiz #1 problem grade Name: Recitation: total General guidelines (please read carefully before starting): Make sure to write your name on the space designated above. Open book : you can use any material you wish. All answers should be given in the space provided. Please do not turn in any extra material. If you need more space, use the back page. You have 120 minutes to complete your quiz. Make reasonable approximations and state them , i.e. quasi­neutrality, depletion approxima­ tion, etc. Partial credit will be given for setting up problems without calculations. NO credit will be given for answers without reasons. Use the symbols utilized in class for the various physical parameters, i.e. µ n , I D , E , etc. Every numerical answer must have the proper units next to it. Points will be subtracted for answers without units or with wrong units. Use φ =0 at n o = p o = n i as potential reference. Use the following fundamental constants and physical parameters for silicon and silicon dioxide at room temperature: n i =1 × 10 10 cm 3 kT /q =0 . 025 q =1 . 60 × 10 19 s =1 . 05 × 10 12 F/cm± ox =3 . 45 × 10 13 F/cm± 1 2 3 4

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1. (25 points) A bar of silicon is doped with acceptors as shown below. The doping density variers
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## This note was uploaded on 07/20/2009 for the course ELECTRICAL 6.012 taught by Professor Prof.jesúsdelalamo during the Fall '05 term at MIT.

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q1_fall05 - Fall 2005 6.012 Microelectronic Devices and...

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