q2_fall05 - Fall 2005 6.012 Microelectronic Devices and...

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Unformatted text preview: Fall 2005 6.012 Microelectronic Devices and Circuits Prof. J. A. del Alamo November 16, 2005 Quiz #2 problem grade Name: Recitation: total General guidelines (please read carefully before starting): Make sure to write your name on the space designated above. Open book : you can use any material you wish. All answers should be given in the space provided. Please do not turn in any extra material. If you need more space, use the back of the page. You have 120 minutes to complete your quiz. Make reasonable approximations and state them , i.e. quasineutrality, depletion approxima tion, etc. Partial credit will be given for setting up problems without calculations. NO credit will be given for answers without reasons. Use the symbols utilized in class for the various physical parameters, i.e. n , I D , E , etc. Every numerical answer must have the proper units next to it. Points will be subtracted for answers without units or with wrong units. Use = 0 at n o = p o = n i as potential reference. Use the following fundamental constants and physical parameters for silicon and silicon dioxide at room temperature: n i = 1 10 10 cm 3 kT /q = 0 . 025 V q = 1 . 60 10 19 C s = 1 . 05 10 12 F/cm ox = 3 . 45 10 13 F/cm 1 2 3 4 1. (30 points) Below is an n + polysilicongate MOSFET. The substrate doping is N a = 10 17 cm 3 and the insulator thickness is 5 nm . The gate length L = 0 . 25 m while the gate width is W = 2 . 5 m . The inversion layer mobility for the MOSFET is N = 250 cm 2 /V s . A capacitance voltage curve of the n + polysilicon gate MOSFET was taken by connecting the source, drain and body terminals together. A voltage was applied between the gate and the body. With the device biased as follows: V BS = 0 V , V DS = 0 . 1 V , V GS = 1 . 11 V , answer the following questions: (1a) (5 points) Calculate the sheet charge density at the drain end of the device, Q n ( y = L ) (numerical answer expected). (1b) (5 points) Calculate the electron drift velocity at the drain end of the device, v n ( y = L ) (numerical answer expected)....
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q2_fall05 - Fall 2005 6.012 Microelectronic Devices and...

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