spectre_mos1_mod

spectre_mos1_mod - computational efficiency and improve...

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The following text is an excerpt from the Cadence documentation of Spectre for the 6.012 Microelectronics courses in Fall 05. MOS Level-1 Model (mos1) Channel Width and Length Threshold Voltage
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Drain Saturation Voltage Drain Current for the Subthreshold Region Note: These equations apply when V GS -V ON 0. You cannot use the subthreshold current equations without nfs. where where I DS,ON is the drain current evaluated at V GS = V ON . Drain Current for the Triode Region GS V DS V . Note: These equations apply when V ON and V DSAT where
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Drain Current for the Saturation Region Note: This equation applies when V GS V ON and V DS V DSAT . Because the standard SPICE Level-1 model does not include any of the short-channel phenomena, such as mobility modulation and velocity- saturation effects, the uses for this model are limited. To retain high
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Unformatted text preview: computational efficiency and improve accuracy, the Spectre ® circuit simulator incorporates two parameters, theta and vmax, into the Level-1 model. The meanings of theta and vmax are the same as those in the Level-3 model. The modified Level-1 model is like a simplified Level-3 model. Spectre uses the modified Level-1 model if theta or vmax (or both) is specified. The drain current equations for the modified Level-1 model are shown in the following section. Drain Saturation Voltage (Modified Level-1 Model) where Drain Current for the Triode Region (Modified Level-1 Model) where Drain Current for the Saturation Region (Modified Level-1 Model)...
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This note was uploaded on 07/20/2009 for the course ELECTRICAL 6.012 taught by Professor Prof.jesúsdelalamo during the Fall '05 term at MIT.

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spectre_mos1_mod - computational efficiency and improve...

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