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Unformatted text preview: and will be shorted together an unacceptable fraction of the time. No required polymetal spacing: Theyre on two different layers. 1 of diffusion and metal surrounding cut: To ensure that contact cut reliably aligns with diffusion region and metal even with layer/mask misregistration. 2 overhang of poly at transistor gates: Transistor must not be shorted even with a 1 shift in the respective layers 6. Design a complex gate cell (transistor schematic and stick diagram) for the following functions. Use the parallel diffusion (Euler path) style of layout. (a) C B A C B A F * * = + + = A B C A B C F (b) E D C B A F * * * + = A B C A B C D E D E F (c) ) )( ( D C B A CD AB F + + = + = A B C D F A B C D (d) AC C A B AC BC AB F + + = + + = ) (...
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 Spring '07
 Shimmel

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