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ECE3080_Homework1 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL...

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ECE 3080: Homework #1 Due date: May 28, 2009 Page 1 of 3 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080: Semiconductor Devices for Computer Engineering and Telecommunication Systems Summer Semester 2009, Homework #1 Homework Due Date: Thursday, May 28, 2009 1. Short Questions (2 points each): (a) What can you say about the Fermi level in a semiconductor device in thermodynamic equilibrium? (b) Given is the E(k) relationship for the conduction band in a semiconductor material. How can you calculate the effective mass of the electrons from this E(k) relation? (c) Name a typical acceptor atom for doping silicon. Where are the additional electron states located? Are those states occupied with an electron at absolute zero (T = 0 K)? Justify your answer. (d) Why is the intrinsic Fermi level in a silicon semiconductor not exactly in the middle of the band gap, i.e. at (E C +E V )/2? (e) How does the electron mobility of a low-doped silicon sample change with increasing temperature (around room temperature)? Justify your answer.
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