ECE3080_Homework2

ECE3080_Homework2 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL...

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ECE 3080: Homework #2 Due Date: June 4, 2009 Page 1 of 2 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080: Semiconductor Devices for Computer Engineering and Telecommunication Systems Summer Semester 2009, Homework #2 Homework Due Date: Thursday, June 4, 2009 1. Carrier Generation: Continuity Equation (50 points) Assume a 1-dimensional silicon crystal, which has been doped with 10 17 cm -3 phosphorous atoms. Using a high-energy light source, 10 14 cm -3 additional electron-hole pairs are generated at x = 0 in the stationary state (dp/dt = dn/dt = 0). (a) Can we consider low-level injection or do we have to assume high-level injection? Justify your answer. (b) Calculate analytical expressions for the minority carrier distribution p n (x) in the stationary state for x > 0 for the following two cases: (i) Infinitely long semiconductor with p n (x= ) = p n0 (see sketch (i)) (ii) Semiconductor with length W and p n (x=W) = p n0 (see sketch (ii))
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ECE3080_Homework2 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL...

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