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ECE3080_Homework3_Solution

# ECE3080_Homework3_Solution - GEORGIA INSTITUTE OF...

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ECE 3080: Homework #3, Solutions June 18, 2009 Page 1 of 5 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080: Semiconductor Devices for Computer Engineering and Telecommunication Systems Summer Semester 2009, Homework #3 SOLUTIONS 1. PN Junction: IV Characteristic (20 points) Consider a p + n silicon diode at T = 300 K with doping concentrations of N A = 10 18 cm -3 and N D = 10 16 cm -3 . The minority carrier hole diffusion coefficient is D p = 12 cm 2 /s and the minority carrier hole lifetime is τ p = 10 -7 s. The cross-sectional area is A = 10 -4 cm 2 . (a) Calculate the reverse saturation current I S . (b) Calculate the diode current I at a forward bias voltage of V A = 0.5 V. (c) Calculate the excess minority carrier hole concentration at the edge depletion region in the n-type region for V A = 0.3 V and V A = – 2 V.

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ECE 3080: Homework #3, Solutions June 18, 2009 Page 2 of 5 2. PN Junction: Reverse-Bias (20 points) An ideal one-sided silicon n + p junction has uniform doping on both sides of the step junction. The doping relation is N
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