ECE3080_Homework3_Solution

ECE3080_Homework3_Solution - GEORGIA INSTITUTE OF...

Info iconThis preview shows pages 1–3. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE 3080: Homework #3, Solutions June 18, 2009 Page 1 of 5 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080: Semiconductor Devices for Computer Engineering and Telecommunication Systems Summer Semester 2009, Homework #3 SOLUTIONS 1. PN Junction: IV Characteristic (20 points) Consider a p + n silicon diode at T = 300 K with doping concentrations of N A = 10 18 cm -3 and N D = 10 16 cm -3 . The minority carrier hole diffusion coefficient is D p = 12 cm 2 /s and the minority carrier hole lifetime is τ p = 10 -7 s. The cross-sectional area is A = 10 -4 cm 2 . (a) Calculate the reverse saturation current I S . (b) Calculate the diode current I at a forward bias voltage of V A = 0.5 V. (c) Calculate the excess minority carrier hole concentration at the edge depletion region in the n-type region for V A = 0.3 V and V A = – 2 V.
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
ECE 3080: Homework #3, Solutions June 18, 2009 Page 2 of 5 2. PN Junction: Reverse-Bias (20 points) An ideal one-sided silicon n
Background image of page 2
Image of page 3
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 07/30/2009 for the course ECE 3080 taught by Professor Staff during the Spring '08 term at Georgia Institute of Technology.

Page1 / 5

ECE3080_Homework3_Solution - GEORGIA INSTITUTE OF...

This preview shows document pages 1 - 3. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online