ECE3080_Homework5_Solution

# ECE3080_Homework5_Solution - GEORGIA INSTITUTE OF...

This preview shows pages 1–3. Sign up to view the full content.

ECE 3080A: Homework #5, Solutions July 7, 2009 Page 1 of 5 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080A: Semiconductor Devices for Computer Engineering and Telecommunication Systems Summer Semester 2009, Homework #5 SOLUTIONS 1. BJT: Frequency Limitation (20 points) In a particular bipolar transistor, the base transit time is 20 percent of the total delay time. The base width is 0.5 μm and the base diffusion coefficient is D B = 20 cm 2 /s. Determine the cut-off frequency. Solution: 2. MS-Contact: Schottky Diode: (20 points) A PtSi Schottky diode at T = 300 K is fabricated on n-type silicon with a doping concentration of N D = 10 16 cm -3 . The barrier height is Φ B = 0.89 eV. Determine (a) the energy difference (E C – E F ) FB in the semiconductor (b) the built-in potential V bi (c) the saturation current density J S (d) the forward bias voltage required for a current density J = 2 A/cm 2 .

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
ECE 3080A: Homework #5, Solutions July 7, 2009
This is the end of the preview. Sign up to access the rest of the document.

## This note was uploaded on 07/30/2009 for the course ECE 3080 taught by Professor Staff during the Spring '08 term at Georgia Tech.

### Page1 / 5

ECE3080_Homework5_Solution - GEORGIA INSTITUTE OF...

This preview shows document pages 1 - 3. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online