Unformatted text preview: Hence as temperature increases, the number of point defects increases exponentially according to the Maxwell-Boltzmann distribution. Hence, the concentration of point defects (i.e. the number of defects / total number of atomic sites in the crystal lattice) is given by: n defect = Ce – (Edefect) /kT n sites where E defect is the activation energy required to form the point defect k is Boltzmann’s constant T is absolute temperature...
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- Spring '09
- Entropy, Crystal, Crystallographic defect, Diffusion Diffusion