lecture22 - Lecture 22, Slide 1 EECS40, Fall 2003 Prof....

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Unformatted text preview: Lecture 22, Slide 1 EECS40, Fall 2003 Prof. King Lecture #22 ANNOUNCEMENTS Contact Dave Nguyen (nguyendt@uclink) if you lost a calculator in the lab The EECS40 Course Reader (containing supplemental reading from Schwarz & Oldham) is now available at Copy Central, 2483 Hearst Ave. Try the educational applets available online! (Visit the class website.) OUTLINE The MOSFET as a controlled resistor Pinch-off and current saturation Channel-length modulation Velocity saturation in a short-channel MOSFET Reference Reading Rabaey et al. : Chapter 3.3.2 Schwarz & Oldham: Chapter 13.4 Howe & Sodini: Chapter 4.3 Lecture 22, Slide 2 EECS40, Fall 2003 Prof. King The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals. For an n-channel MOSFET, the SOURCE is biased at a lower potential (often 0 V) than the DRAIN (Electrons flow from SOURCE to DRAIN when V G > V T ) For a p-channel MOSFET, the SOURCE is biased at a higher potential (often the supply voltage V DD ) than the DRAIN (Holes flow from SOURCE to DRAIN when V G < V T ) The BODY terminal is usually connected to a fixed potential. For an n-channel MOSFET, the BODY is connected to 0 V For a p-channel MOSFET, the BODY is connected to V DD MOSFET Terminals Lecture 22, Slide 3 EECS40, Fall 2003 Prof. King MOSFET Circuit Symbols...
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This note was uploaded on 08/23/2009 for the course EECS 40 taught by Professor Chang-hasnain during the Fall '08 term at University of California, Berkeley.

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lecture22 - Lecture 22, Slide 1 EECS40, Fall 2003 Prof....

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