glossary - Introduction to Microelectronics Appendix A...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
Introduction to Microelectronics Appendix A G LOSSARY OF S YM B OLS Symbol Explanation A Area of a 1D device (cm 2 ); in subscript: acceptor. A i Small-signal current gain in two port network (A/A) A v Small-signal voltage gain in two-port network (V/V) B Base terminal in BJT, subscript: base C Collector terminal in BJT; subscript: collector C j Junction capacitance of a p-n dioe (pF) D Drain terminal in MOSFET, subscript: drain; donor D n Diffusivity for electrons (cm 2 /s) D p Diffusivity for holes E Emitter terminal in BJT; energy (eV) E C Conduction band for electrons in the band diagram (eV) E F Fermi level in an equilibrium system to find n and p in the band diagram (eV) E Fn Quasi-Fermi level for electrons in a nonequilibrium system to find n (eV) E Fp Quasi-Fermi level for holes in a nonequilibrium system to find p (eV) E gap Potential energy for separation of electron and hole; bandgap energy (eV) E i Intrinsic level of semiconductor in the band diagram (eV) E V Valence band for holes in the band diagram (eV) F Electric field (V/cm) G Generation of electrons and holes (cm -3 s -1 ); Gate terminal in MOSFET, subscript:
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 08/30/2009 for the course ECE 3150 taught by Professor Spencer during the Spring '07 term at Cornell.

Page1 / 3

glossary - Introduction to Microelectronics Appendix A...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online