week06 - ECE 3150 Spring 2009 Week 6 Recitation Ask for...

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Q 1 R L = 20k v IN v OUT V DD = 5V Problems 2-4. ECE 3150 Spring 2009 Week 6 Recitation Ask for Homework questions first on Homework 5 (you can choose to do Work problems below first) Finish the recitation question in the last time if you do not have a chance. Walk through the BJT operations in the forward active region again, emphasizing how v BE controls i C , and how i C only weakly depends on v CE . The transconductance g m is highly dependent on the operating point. Explain the band width modulation and the Early voltage. Mention that r o , a small-signal parameter, is extracted from the extrapolation of the large-signal v CE i C plot. Originally r o should depend on the large- signal operating point, but since the IV is quite linear with the Early voltage definition, r o is constant in the forward active region. Map the BJT forward-active region to the MOSFET subthreshold saturation region: the minority carrier concentration in the BJT is similar to the channel carrier concentration
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This note was uploaded on 08/30/2009 for the course ECE 3150 taught by Professor Spencer during the Spring '07 term at Cornell.

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week06 - ECE 3150 Spring 2009 Week 6 Recitation Ask for...

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