Lecture23-Amplifier+Configurations+1

Lecture23-Amplifier+Configurations+1 - ECE 3040:...

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ECE 3040 - Dr. Ying Zhang Georgia Tech ECE 3040: Microelectronic Circuits Lecture 23 Reading: Notes
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ECE 3040 - Dr. Ying Zhang Georgia Tech Recapture MOSFET Small Signal Model () DS DS T GS n o V I V V K g + = = λ 1 2 2 () ( ) = + = 2 1 TN GS DS DS T GS n m V V I V V V K g r o =1/g o
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ECE 3040 - Dr. Ying Zhang Georgia Tech Recapture MOSFET Small Signal Model Compare with BJT Results () DS DS T GS n o V I V V K g y + = = = λ 1 2 2 22 () ( ) = + = = 2 1 21 TN GS DS DS T GS n m V V I V V V K g y CE A C V V I y + = 22 T C V I y = 21 MOSFET BJT There is a large amount of symmetry between the MOSFET and the BJT Each of these parameters act in the same manner
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ECE 3040 - Dr. Ying Zhang Georgia Tech Recapture MOSFET Small Signal Model Compare this to the BJT small signal equivalent circuit r o =1/g o
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ECE 3040 - Dr. Ying Zhang Georgia Tech Recapture MOSFET Small Signal Model With Body Effect
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ECE 3040 - Dr. Ying Zhang Georgia Tech Recapture Complete MOSFET Small Signal Model Reverse Bias Junction capacitances Overlap of Gate Oxide and Gate to channel capacitance Overlap of Gate Oxide Gate to channel to Bulk capacitance F SB m mb V g g φ γ 2 2 + = Due to effective modulation of the threshold voltage.
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ECE 3040 - Dr. Ying Zhang Georgia Tech ± General Amplifier Concepts ± 2-Port Amplifier Models Agenda
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ECE 3040 - Dr. Ying Zhang Georgia Tech ± Output may be either a voltage or a current
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ECE 3040 - Dr. Ying Zhang Georgia Tech Amplifier Configurations
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Lecture23-Amplifier+Configurations+1 - ECE 3040:...

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