Lecture15-BJT+Ebers-MollModel

Lecture15-BJT+Ebers-MollModel - ECE 3040 - Dr. Ying Zhang...

Info iconThis preview shows pages 1–11. Sign up to view the full content.

View Full Document Right Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: ECE 3040 - Dr. Ying Zhang Georgia Tech ECE 3040: Microelectronic Circuits Lecture 15 Reading: Pierret 11.1 ECE 3040 - Dr. Ying Zhang Georgia Tech Recapture BJT Performance Parameters ( ) En Ep Ep E Ep I I I I I + = = 1 Emitter Efficiency : Characterizes how effective the large hole current is controlled by the small electron current. Unity is best, zero is worst. (0 1) ( ) Ep Cp T I I = 2 Base Transport Factor : Characterizes how much of the injected hole current is lost to recombination in the base. Unity is best, zero is worst. (0 T 1) Note: This slide refers to a pnp transistor T dc = ) 3 ( Common Base DC Current Gain ( I C / I E ) dc dc dc = 1 ) 4 ( Common Emitter DC Current Gain ( I C / I B ) ECE 3040 - Dr. Ying Zhang Georgia Tech Recapture BJT Analysis Assumptions 1. pnp device with nondegenerate, uniform doping and step junctions 2. Steady-state operation 3. Device is 1-dimensional 4. Low-level injection prevails in the quasineutral regions 5. No light and other processes other than drift, diffusion, and thermal recombination-generation 6. Negligible thermal R-G throughout the EB and CB depletion regions 7. Quasineutral widths of the emitter and collector are much greater than the minority carrier diffusion lengths (semi- infinite in extent) ECE 3040 - Dr. Ying Zhang Georgia Tech Recapture =n i 2 /N E =n i 2 /N B =n i 2 /N C BJT Notation ECE 3040 - Dr. Ying Zhang Georgia Tech Recapture: BJT Analysis The Problem Setup... Then Use LAW OF THE JUNCTION! From our diode boundary conditions ECE 3040 - Dr. Ying Zhang Georgia Tech Recapture: BJT Analysis The Problem Setup... Then Use ECE 3040 - Dr. Ying Zhang Georgia Tech Recapture BJT Quantitative Solution ECE 3040 - Dr. Ying Zhang Georgia Tech Recapture BJT Performance Parameters ECE 3040 - Dr. Ying Zhang Georgia Tech BJT Simplified Performance Parameters Ebers-Moll Model Agenda ECE 3040 - Dr. Ying ZhangECE 3040 - Dr....
View Full Document

This note was uploaded on 09/05/2009 for the course ECE 3040 taught by Professor Hamblen during the Spring '07 term at Georgia Institute of Technology.

Page1 / 23

Lecture15-BJT+Ebers-MollModel - ECE 3040 - Dr. Ying Zhang...

This preview shows document pages 1 - 11. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online