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Lecture15-BJT+Ebers-MollModel

Lecture15-BJT+Ebers-MollModel - ECE 3040 Microelectronic...

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ECE 3040 - Dr. Ying Zhang Georgia Tech ECE 3040: Microelectronic Circuits Lecture 15 Reading: Pierret 11.1
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ECE 3040 - Dr. Ying Zhang Georgia Tech Recapture BJT Performance Parameters ( ) En Ep Ep E Ep I I I I I + = = γ 1 Emitter Efficiency : Characterizes how effective the large hole current is controlled by the small electron current. Unity is best, zero is worst. (0 ≤ γ ≤ 1) ( ) Ep Cp T I I = α 2 Base Transport Factor : Characterizes how much of the injected hole current is lost to recombination in the base. Unity is best, zero is worst. (0 ≤ α T 1) Note: This slide refers to a pnp transistor T dc γα α = ) 3 ( Common Base DC Current Gain ( I C / I E ) dc dc dc α α β = 1 ) 4 ( Common Emitter DC Current Gain ( I C / I B )
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