Lecture10-DiodeModels

Lecture10-DiodeModels - ECE 3040: Microelectronic Circuits...

Info iconThis preview shows pages 1–10. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE 3040 - Dr. Ying Zhang Georgia Tech ECE 3040: Microelectronic Circuits Lecture 10 Reading: Jaeger 3.4-3.14, Pierret 9.2, Notes
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
ECE 3040 - Dr. Ying Zhang Georgia Tech Depletion Region Approximation: Step Junction Solution with Applied Voltage V bi V bi |V A | V bi |V A | V bi V A =0 : No Bias V A <0 : Reverse Bias V A >0 : Forward Bias Recapture
Background image of page 2
ECE 3040 - Dr. Ying Zhang Georgia Tech E fp -E fn =-qV A Fermi-level only applies to equilibrium (no current flowing) Majority carrier Quasi-fermi levels Recapture
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
ECE 3040 - Dr. Ying Zhang Georgia Tech Consider a p + -n junction (heavily doped p-side, normal or lightly doped n side). Recapture
Background image of page 4
ECE 3040 - Dr. Ying Zhang Georgia Tech Recapture P-n Junction I-V Characteristics Electron Diffusion Current Electron Drift Current Hole Diffusion Current Hole Drift Current In Equilibrium, the Total current balances due to the sum of the individual components
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
ECE 3040 - Dr. Ying Zhang Georgia Tech Electron Diffusion Current Electron Drift Current Hole Diffusion Current Hole Drift Current Current flow is proportional to e (Va/Vref) due to the exponential decay of carriers into the majority carrier bands Current flow is dominated by majority carriers flowing across the junction and becoming minority carriers Recapture P-n Junction I-V Characteristics
Background image of page 6
ECE 3040 - Dr. Ying Zhang Georgia Tech Electron Diffusion Current negligible due to large energy barrier Electron Drift Current Hole Diffusion Current negligible due to large energy barrier Hole Drift Current Current flow is constant due to thermally generated carriers swept out by E- fields in the depletion region Current flow is dominated by minority carriers flowing across the junction and becoming majority carriers Recapture P-n Junction I-V Characteristics
Background image of page 7

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
ECE 3040 - Dr. Ying Zhang Georgia Tech Reverse Bias: Current flow is constant due to thermally generated carriers swept out by E-fields in the depletion region Forward Bias: Current flow is proportional to e (Va/Vref) due to the exponential decay of carriers into the majority carrier bands Current flow is zero at no applied voltage I=I o (e Va/Vref -1) Recapture P-n Junction I-V Characteristics
Background image of page 8
ECE 3040 - Dr. Ying Zhang
Background image of page 9

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 10
This is the end of the preview. Sign up to access the rest of the document.

Page1 / 25

Lecture10-DiodeModels - ECE 3040: Microelectronic Circuits...

This preview shows document pages 1 - 10. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online