11 CMOS - ECE 110 M.-C. Brunet Some of the CMOS Research at...

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ECE 110 M.-C. Brunet CMOS gates Handout 11 Some of the CMOS Research at ECE Prof. Yun Chiu Capabilities of post-fabrication error correction and self-adaptation into analog ICs by exploiting adaptive igital techniques Prof. Greg Timp 100GHz MOS digital techniques >100GHz MOS- nanotransistor circuits Prof. Jean-Pierre Leburton Theory and simulation of nanoscale semiconductor devices and low-dimensional stems systems
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ECE 110 M.-C. Brunet CMOS gates Handout 11
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ECE 110 M.-C. Brunet CMOS gates Handout 11 Bipolar Junction Transistors (BJT’s) example: npn BJT Field Effect Transistors C omplementary (FET’s) example: CMOS BJT: 3 Terminals J iv graphs ( model) symmetric M etal O xyde S emiconductor Vout Vin Vin T is Low Hig hO f f J the transistor as a switch (inverter) High Low On( saturated ) CMOS: 4 terminals!! Non-linear iv In ECE 110, we will not study CMOS iv!…. but use simple model ON / OFF M.-C. BRUNET ECE 110 UIUC 11.1 4 - Terminal Symbol D (drain) B (bulk) S (source) * G (gate) * Always connected to the same voltage t Gate S D Difference
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11 CMOS - ECE 110 M.-C. Brunet Some of the CMOS Research at...

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