Etching handout - Fabrication Technology, Part I Agenda...

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1 Lecture 4 EEL 5225, Fall 2009, H. Xie Fabrication Technology, Part I b Senturia, Ch. 3 pp. 50-77 f HW2 h Agenda B Lithography B Pattern Transfer (etching)
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2 Lecture 4 EEL 5225, Fall 2009, H. Xie Lithography s Overview s Components s Process s Photoresists Lithography
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3 Lecture 4 EEL 5225, Fall 2009, H. Xie Lithography Overview s Photolithography s Process of transferring geometric patterns from a photomask to the substrate via a photoresist (a photosensitive layer) s Resolution – smallest possible feature, w min s Registration – mask to mask alignment s Throughput – # wafers/hr Light Source Optics Photomask Photoresist h ν Substrate Patterned Photoresist Layer
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4 Lecture 4 EEL 5225, Fall 2009, H. Xie Lithography – Exposure Methods s Shadow Printing s Contact lithography s ~1 μ m max. resolution s Mask damage s Proximity lithography s 2 – 5 μ m max. resolution s Projection Printing s <1 μ m s Nx reduction (e.g., 2x, 5x, 10x) s More costly Contact/Proximity Projection
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5 Lecture 4 EEL 5225, Fall 2009, H. Xie Lithography – Details s For contact/proximity: Ex: λ = 365 nm, g = 50 um b w min = 4.3 um s For projection: Ex: λ = 365 nm, NA = 0.6 b w min = 0.6 um, DOF = 1.0 um λ : wavelength g : gap between mask and wafer (including photoresist thickness) g w min w min 2 ) ( 1 DOF : numerical aperture, usually 0.2 - 0.8 θ sin n = θ n : index of refraction for lens
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6 Lecture 4 EEL 5225, Fall 2009, H. Xie Light Sources s UV light from Hg lamp s g-line ( λ = 436 nm) s h-line ( λ = 405 nm) s i-line ( λ = 365 nm) b 0.3µm s Excimer lasers (DUV) s KrF ( λ = 248 nm) b 0.18 µm s ArF ( λ = 193 nm) b 0.10 µm s F 2 ( λ = 157 nm) b 0.07 µm Ref: May & Sze, Fund. Semiconductor Fabrication , pp.66 Typical projection lithography resolutions
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7 Lecture 4 EEL 5225, Fall 2009, H. Xie Lithography – Example Systems s Wavelength: 248 nm s Lens-NA: 0.82 s Exposure Area: 26 mm x 33 mm s Reduction Ratio: 4x s Resolution: < 110 nm s Wafer Size: 200/300 mm Nikon NSR-S207D Karl Suss MA6 s Contact 1:1 aligner s Mask size: 100 or 125 mm s Resolution: ~1 μ m s Wafer size: 75 or 100 mm
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8 Lecture 4 EEL 5225, Fall 2009, H. Xie Lithography – Photomask s “Photomask” (1:1 transfer) s “Reticle” (up to 10x reduction) s Requirements
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This note was uploaded on 09/17/2009 for the course EEL 5225 taught by Professor Arnold during the Fall '08 term at University of Florida.

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Etching handout - Fabrication Technology, Part I Agenda...

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