# pract_ex2_c - NAME ____________________________________...

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Unformatted text preview: NAME ____________________________________ NETID _______________ MIDTERM EXAM 2 - SOLUTIONS (Closed book) ECE 442 April 12, 2007 7:00 p.m. – 8:30 p.m. Instructions : Write your name, and NetID where indicated. You are allowed to use one formula sheet (8 1/2 × 11) and a calculator. This examination consists of 4 problems. Each problem is worth 25 points. Show all work in order to receive partial credit. Problem 1 Problem 2 Problem 3 Problem 4 Total - 2 - Formula Sheet DIODE / ( 1 ) D T V V D S I I e = − , where 26 mV B T k T V q = = BIPOLAR (NPN forward active I B >0, V CE >V CE , sat ) / / 1 BE T BE T V V V V CE C S S A V I I e I e V ⎛ ⎞ = ⋅ + ≅ ⎜ ⎟ ⎝ ⎠ where 26 mV B T k T V q = = C E I I α = 1 CE C B B A V I I I V β β ⎛ ⎞ = ⋅ + ≅ ⎜ ⎟ ⎝ ⎠ 1 β α β = + MOSFET (long channel model equations) Define V DSP = V GS-V T , where V T is the threshold voltage NMOS PMOS Triode Region (Linear) & , GS T DS DSP V V V V > < 2 ' ( ) 2 DS D G S T D S V W I k V V V L ⎛ ⎞ = ⋅ − ⋅ − ⎜ ⎟ ⎝ ⎠ Active Region (Saturation) & , GS T DS DSP V V V V > ≥ [ ] 2 ' ( ) 1 2 D GS T DS W k I V V V L λ = ⋅ ⋅ − ⋅ + ⋅ Body Effect ( ) 2 2 T T o S B F F V V V γ φ φ = + ⋅ + − , GS T D V V I ≤ = Triode Region (Linear) & , GS T DS DSP V V V V < > 2 ' ( ) 2 DS D G S T D S V W I k V V V L ⎛ ⎞ = ⋅ −...
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## This note was uploaded on 09/19/2009 for the course ECE 442 taught by Professor Schutt-aine during the Spring '08 term at University of Illinois at Urbana–Champaign.

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pract_ex2_c - NAME ____________________________________...

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