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pract_exa - NAME_SOLUTIONS NETID MIDTERM EXAM 1...

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NAME _ SOLUTIONS ________________ NETID _______________ MIDTERM EXAM 1 SOLUTIONS (Closed book) ECE 442 June 30, 2005 8:00 a.m. – 9:00 a.m. Instructions : Write your name, and NetID where indicated. You are allowed to use a calculator. This examination consists of 4 problems. Show all work. Problem1 Problem 2 Problem 3 Problem 4 Total
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- 2 - Formula Sheet DIODE / ( 1) D T V V D S I I e = , where 26 mV B T k T V q = = BIPOLAR (NPN forward active I B >0, V CE >V CE , sat ) / / 1 BE T BE T V V V V CE C S S A V I I e I e V = + where 26 mV B T k T V q = = C E I I α = 1 CE C B B A V I I I V β β = + 1 β α β = + MOSFET (long channel model equations) Define V DSP = V GS -V T , where V T is the threshold voltage NMOS PMOS Triode Region (Linear) & , GS T DS DSP V V V V > < 2 ' ( ) 2 DS D GS T DS V W I k V V V L = Active Region (Saturation) & , GS T DS DSP V V V V > [ ] 2 ' ( ) 1 ( ) 2 D GS T DS DSP W k I V V V V L λ = + Body Effect ( ) 2 2 T To SB F F V V V γ φ φ = + + , 0 GS T D V V I =
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