# pract_exc - NAME _ NETID _ MIDTERM EXAM 1 - SOLUTIONS...

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NAME ____________________________________ NETID _______________ MIDTERM EXAM 1 - SOLUTIONS (Closed book) ECE 442 March 1, 2007 7:00 p.m. – 8:30 p.m. Instructions : Write your name, and NetID where indicated. You are allowed to use a calculator. This examination consists of 5 problems. Each problem is worth 20 points. Show all work in order to receive partial credit. Problem 1 Problem 2 Problem 3 Problem 4 Problem 5 Total

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- 2 - Formula Sheet DIODE / (1 ) DT VV DS II e =− , where 26 mV B T kT V q == BIPOLAR (NPN forward active I B >0, V CE >V CE , sat ) // 1 B ET B CE CS S A V e I e V ⎛⎞ =⋅ + ⎜⎟ ⎝⎠ where 26 mV B T V q CE I I α = 1 CE CB B A V I V β + 1 = + MOSFET (long channel model equations) Define V DSP = V GS -V T , where V T is the threshold voltage NMOS PMOS Triode Region (Linear) & , GS T DS DSP VVVV >< 2 '( ) 2 DS DG S T D S V W Ik V V V L Active Region (Saturation) & , GS T DS DSP >≥ [] 2 ' () 1 2 D GS T DS Wk I V L λ + Body Effect 22 TT o S B F F V γ φφ =+ + , 0 GS T D I ≤= Triode Region (Linear) & , GS T DS DSP < > 2 ) 2 DS S T D S V W V V V L
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## This note was uploaded on 09/19/2009 for the course ECE 442 taught by Professor Schutt-aine during the Spring '08 term at University of Illinois at Urbana–Champaign.

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pract_exc - NAME _ NETID _ MIDTERM EXAM 1 - SOLUTIONS...

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