solution4 - ECE 442 Spring 2009 HW#4 Solutions 1. k n = n C...

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Unformatted text preview: ECE 442 Spring 2009 HW#4 Solutions 1. k n = n C ox = n ox t ox = 650 10- 4 3 . 45 10- 11 20 10- 9 = 112 . 1 A V 2 a) v DS < v GS- V t MOSFET is in the triode region: i D = k n W L [( v GS- V t ) v DS- 1 2 v 2 DS ] = 112 . 1 10- 6 10 [(5- . 8) 1- 1 2 1 2 ] = 4 . 15 mA b) v DS = v GS- V t MOSFET is at the edge of saturation: i D = 1 2 k n W L ( v GS- V t ) 2 = 1 2 112 . 1 10- 6 10 (2- . 8) 2 = 0 . 81 mA c) v DS < v GS- V t MOSFET is in the triode region: i D = k n W L [( v GS- V t ) v DS- 1 2 v 2 DS ] = 112 . 1 10- 6 10 [(5- . 8) . 2- 1 2 . 2 2 ] = 0 . 92 mA d) v DS > v GS- V t MOSFET is in saturation: i D = 1 2 k n W L ( v GS- V t ) 2 = 1 2 112 . 1 10- 6 10 (5- . 8) 2 = 9 . 9 mA 2. V G = 0 , V S = 5 V ov = v GS- V t =- 5- (- 1 . 5) =- 3 . 5 V To operate in saturation: v DS v ov V D - 3 . 5 + 5 = 1 . 5 V a) V D = 4 > 1 . 5 triode ; v DS = 4- 5 =- 1 V i D = k p...
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This note was uploaded on 09/19/2009 for the course ECE 442 taught by Professor Schutt-aine during the Spring '08 term at University of Illinois at Urbana–Champaign.

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solution4 - ECE 442 Spring 2009 HW#4 Solutions 1. k n = n C...

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