ch 9 examples - ch 9 examples Example 9.1 \u2022 Design a circuit to compute F = A&B | C&D using NANDs and NORs SOLUTION two ANDs and an OR \u2013 Figure

ch 9 examples - ch 9 examples Example 9.1 u2022 Design...

This preview shows page 1 - 8 out of 16 pages.

ch 9 examples
Example 9.1 Design a circuit to compute F = A&B | C&D using NANDs and NORs. SOLUTION: two ANDs and an OR Figure 9.2(a). convert to basic CMOS stages Figure 9.2(b) bubble push simplifies to three NANDs. Fig 9.2(c,d)
Ex 9.2 Calculate the minimum delay to compute F = AB + CD using Fig 9.2(d) and 9.3. Each input can present up to 20 Q of transistor width. The output must drive a load of 100 Q Choose transistor sizes to achieve this delay.
H = 100/20 = 5, B = 1. NAND gates: G = (4/3) × (4/3) = 16/9, P = 2 + 2 = 4. AOI22 + inverter: G = (6/3) × 1 = 2, P = 12/3 + 1 = 5. F = GBH = 80/9 and 10, respectively. delays are NF 1/N + P , or 10.0 Y and 11.3 Y, respectively. compound gates not always faster; simple 2- input NAND gates can be fast.
To compute sizes, determine the best stage efforts, = 3.0 and 3.2, respectively. in the range of 2.4–6 reasonable 2 nd gate: Cin = Cout * g / sqrt(F) NAND: Cin = 100*(4/3)/3.0 = 44 AOI22: Cin = 100*1/3.2 = 31
Ex 9.3 Size the nMOS transistors in the asymmetric NAND gate for unit pulldown current considering velocity saturation.

  • Left Quote Icon

    Student Picture

  • Left Quote Icon

    Student Picture

  • Left Quote Icon

    Student Picture