HW4_2009_final - MSE 2620, Spring 09 Homework #4...

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MSE 2620, Spring ‘09 Homework #4 Instructions: Due Tuesday, Apri 21st, 2009. Turn in one solution per group and be sure to include the group letter, the names of the group members, and if any group members did not participate enough to deserve full credit along with the reasons why. 1. Schottky and Ohmic a. Describe the difference between a Schottky and Ohmic contact. b. If a metal makes a Schottky to n-type Si, would it more likely be an Ohmic or Schottky contact to p-type Si. Justify your answer. c. Consider a Schottky junction diode between Au and n-Si doped with 10 16 donors cm -3 . The cross-sectional area is 1mm 2 . Given the work function of Au is 5.1 eV, what is the theoretical barrier height Φ B from the metal to the semiconductor? d. Given that the experimental barrier height Φ B is about 0.8 eV, i) what is the reverse saturation current and ii) the current when there is a forward bias of 0.3 V across the diode? kT T B J B exp 2 0 and 3 2 0 / 4 h k em B e ,
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This note was uploaded on 09/30/2009 for the course MSE 2620 taught by Professor Malliaras during the Spring '09 term at Cornell University (Engineering School).

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HW4_2009_final - MSE 2620, Spring 09 Homework #4...

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