ss_6 - — 0 ‘1- ‘éw \L E‘ NRA) -= V' + .O‘W —...

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Unformatted text preview: — 0 ‘1- ‘éw \L E‘ NRA) -= V' + .O‘W — " — = I? WM 4A “msa : 1-“) =5 -‘-‘=3HDflE”3—” = 7,$§ ;‘ 6.02m; WVM v. 0 .- WI m = km: W‘s/6...} “3 \.'3rémo A; a} mama 9. max M N %%NWR\O7 \hawfih .1 . ‘ " \nT‘l I E CAL). E \T S a“ _‘ \‘NDR '5 ' ‘01 ‘ ’- Q‘t‘bw \E X’- ‘f:: 3th [Thad o 7 DVD g\ -. \-¥ Mquvh bum. NEON;th PU «’1 ' ' ' muff”: » “W: 8‘ x r 9. \JD ex wag. 3.. v B ww: m g;- x \m‘i‘: .e- = N! N. “WI-m \w‘% 45‘: Low ,4 ‘70 _ 20% ‘ - gem : sane” M V‘bEW’x A, ,A mm W‘ W: (500-: \DHt ~\,\ NEW) f. D‘M h.) \ mime: FA \WWLX ‘3). V2 k if)‘ TWMS Ext/Z,» k‘ w‘“ V. -_ Lg 2.4; W. ‘. ‘. “N1, mm \m \HZ Pb "- '1 NW N MSW w .A mum mm V54: New- »A« Wu P o mod b) can be created by doping with a group III element; 9 ., ,-. = u ' \wmexv Wbmmm ram ‘ ‘ NU '” \L, ‘ Mr M Mpmim 92.45:}: ,1. ‘ as s2: s33 We Man at; 5 ~ !\ ‘ow‘xm manages. carost adem'w I ‘ , 1 g: '"- bum \mmme, u me (how W Vficmdw bout. swig; NM - ' M‘c. s» \ - <;\‘A~'-e“\‘>ficLAL_ Mk1“ a o? i r " ' ea UL “~ 615:. _ 4. Pure silicon can be converted into a p-type semiconductor by doping with small amounts of: V a) B; ____.. b) Ga; _._...._ 0) Al; d) Cd; —--- all ofthe above. 5. n—type silicon: —"""'— & _.___. W99“, % a) has a higher electrical conductivity at room temperature than intrinsic (pure) silicon; w —.>c) is formed when dopants introduce electrons into the otherwise-empty conduction band; \ , ll ( d) can be created by alloying Si with Ge. e) none of the above. 6. A hole: a) correSponds to a missing Si atom; b) carries a net charge of —1; C? corresponds to a missing electron from the valence band; all of the above; 6) none of the above. Freed ...
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This note was uploaded on 10/03/2009 for the course E E344 taught by Professor Libera during the Spring '09 term at Stevens.

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ss_6 - — 0 ‘1- ‘éw \L E‘ NRA) -= V' + .O‘W —...

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