ss_10

# ss_10 - 1 A typical 64 Mbyte dynamic RAM chip can be...

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Unformatted text preview: 1?. A typical 64 Mbyte dynamic RAM chip can be carried on a piece of silicon approximately 101112 in size. Estimate the lateral dimension associated with an individual transistor - storing a single data bit - on this chip. Ma page W\$‘z£ \ \ ‘1 5 -‘° ‘2. ‘1‘ =_ on — 0 mm x \o m Kim “I _ 4A \e— ébknoé 7% :3) 0_0q142 Mo {U ‘: 0."\‘47?JAM ¢________... 21. Consider a specimen of pure silicon with a gap energy of 1.12 eV. a) Sketch a well-labeled energy-band diagram for pure silicon. b) At a temperature of O K, would you expect the conductivity of this silicon to be more like that of: (i) SiOz at 300 K; (ii) Si at 300 K; or (iii) Cu at 300 K? Briefly explain your answer. 0) Suppose the silicon at 0 K is illuminated by a beam of light whose wavelength is 2 pm. Will the silicon absorb or transmit this light? Quantitativer justify your answer. Will the adsorptionftransmission property change if the silicon is allowed to warm to room temperature? Brieﬂy explain your answer. d) Suppose the silicon is doped with arsenic whose donor level lies 0.054 eV below the conduction band. Will this dopant affect the adsorptionftransmission behavior of the silicon for 2 Min wavelength light? Brieﬂy explain your answer. ® ———-—————-—— EEO a,va \‘n m mow WW :9: WM, 8 H: mm “To N Raﬁ: "Riv CE“; “3 “RD/ms“: gx © E'st him ELECTQOKX‘ Mix WE CWXBJ/Evﬁy wak$35. R .. "'" @6796?“ 3-w\%zm°“%\l‘“t‘$\ he”: not NT 6;. _ W L '2 FR; M. '7' 0-6?— c\l ' m %x mm WMMT "was 2» WW5 UN 3%— N s; @013. x": 09W N “Jim‘w S- \Wwﬁ‘lt W: Mam 6* _ wwmwza‘ m» u- WWE‘UW a} 2/“ ha“ _' 5-H: e'Q/x WNW: Mkk PD\ ‘5‘ To Volta-i2, e“: W955: WE. gnaw. Wh'm M... MM 22mm w\\\ my”; Lit-VIEW MV’W To 2 a. Lt \. ® ﬁulcﬁz, RT‘$09M merc‘ﬁi MOST Etttm \H Wt. Wow. mm. use, MMA-Lk‘f Emmi}; nary WE 6.29:,s m has? MM Eh, swarms ts» EYE.an Matt. limusm. Us :2. s. 24. Using well-labeled energy-band diagramgﬁdescﬁbe the differences between intrinsic silic0n, p-type silicon, and n-type silicon. “M‘WmnqmmvwmﬂWﬂW imam-WW E , WWW '“” W OE: Ea: mud mam mm MM 15' Ucuﬁg MW /v///i/ W5 \DWgssL in m“ WWW \$~ \s we» e:me WWW“ VDEMWW www- .W 25. Contrast the effect on the electrical conductivity of doping pure Si with 1 wt% Al to that of alloying pure A] with 1 wt% Si. What is the approximate increase or decrease in electrical conductivity in each case? M \S is: W TEL Eta—«c»:— mmai \Q\\L {\0' RS 9‘ ‘5-me haema- mm mick To 3:, (ﬁbbml: \ (304, \mu. macaw: 6;; VbY Msbxdtr 3“ TD Momva LmU. bar/mat crﬁ V9; 9(th '3 \o games: at Wm memo smTchca \ 28. Outline 3 sequence of processing steps that could be used to create a pad of pure copper metal with lateral dimensions of 100 um x100 inn and a thickness of 100 nm to be deposited on a 1 inch diameter silicon wafer so that the pad is electrically isolated from the silicon except for a single connecting lead which has lateral dimensions of 10 um x 10 um. '- ﬂ,» yer/#2325137 ‘ {L9 ' y 0 1t “3 \J/u-s I/Ah '0 C). u at, was ‘Fdwsm 8' Z ' .22” L ._. / ” M s: C? most-r C» “Y0 “W aﬂoat» WCQ. W04 Wham: \ELEAST . (3 many Yél-tSVST’ + spams: LMLD‘; 5M8: ...
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