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apc_section_9 - 9.11 explain the different temperature...

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Assessment Performance Criteria Section F1 – The Electrical Properties of Materials Students will be able to: 9.1 distinguish between resistance and resistivity 9.2 use Ohm’s Law. 9.3 explain how the resistivity of metals is governed by electron scattering 9.4 explain the effects of structural defects on resistivity 9.5 use energy-band diagrams to distinguish between metals, insulators, and semiconductors. 9.6 differentiate between different classes of engineering materials based on their resistivity 9.7 explain why a full valence electron band leads to insulating behavior 9.8 describe a capacitor and the concepts of dielectric constant and dielectric strength. 9.9 define what is meant by a hole in a semiconductor 9.10 describe how electron-hole pairs can be generated
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Unformatted text preview: 9.11 explain the different temperature dependence of resistivity in a metal and an intrinsic semiconductor. 9.12 distinguish between p-type and n-type dopants in a semiconductor and give examples for the case of dopants in Si. 9.13 describe the construction and operation of a p-n junction and how this leads to its characteristic I-V curve. 9.14 briefly describe how the following devices based on the p-n junction work: rectifier; photodiode; solar cell, LED. 9.15 describe the major steps of semiconductor device processing including: single crystal growth; doping by ion implantation or in diffusion; lithography; oxidation; and thin-film deposition....
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  • Spring '09
  • Semiconductor Device Processing, dielectric strength. define, resistivity use Ohm, Criteria Section F1, valence electron band

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