Unformatted text preview: 9.11 explain the different temperature dependence of resistivity in a metal and an intrinsic semiconductor. 9.12 distinguish between p-type and n-type dopants in a semiconductor and give examples for the case of dopants in Si. 9.13 describe the construction and operation of a p-n junction and how this leads to its characteristic I-V curve. 9.14 briefly describe how the following devices based on the p-n junction work: rectifier; photodiode; solar cell, LED. 9.15 describe the major steps of semiconductor device processing including: single crystal growth; doping by ion implantation or in diffusion; lithography; oxidation; and thin-film deposition....
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- Spring '09
- Semiconductor Device Processing, dielectric strength. define, resistivity use Ohm, Criteria Section F1, valence electron band