EE477midterm_paper2 - Midterm Examination#1 EE 477L...

Midterm Examination #1
EE 477L University of Southern California
February 26, 2008
Name (as known by the
university)
RA~k)l-
-
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Degree Program (BSCENG, BSEE, MSEE, ete.)-----.LH--::.)=---.::l:"--'£=-- _
Instruetions:
*
The examination is open book and notes. Calculator is allowed but you must tum off
your cell phones and put away laptops and other wireless devices.
*
Please do not write on the backs of the pages.
*
Note that problems have different point values.
*
Please show your work.
*
Be sure to budget your time.
Be sure to write your answers in the boxes when they are provided.
Assume (unless stated otherwise in each problem):
V
dd
=
2.5
v.,
V
ss
=
0
v.,
V
ln
= .7 v., Vip = -.7 v
V'n(body effect) =.9 v., Vlp(body effect) = -.9 v.
Leakage current per transistor = .2 nanw.
EO (epsilon) = 8.85 X 10 -14 F/cm and Eoxidc(epsiIon) = 3.9
Rs of silicide = 4
n
per
0
(ohms per square). Rs of metall = .08
n
per
0
square (ohms
per square). Rs of poly = 4.1
n
per
0
(ohms per square).
Rs of n diffusion =4.7
n
per
0
(ohms per square).
Rs of p diffusion =3.4
n
per
0
(ohms per square).
C
jbsn
= 17.27
X
10-
4
pF 111m2 and Cjbswn = 4.17 x 10-
4
pF 111m (micrometer).
C
jbsp
= 18.8
X
10-
4
pFI I1m
2
and Cjbswp = 3.17
X
10-
4
pFI 11m (micrometer).