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EE477midterm_paper2

EE477midterm_paper2 - Midterm Examination#1 EE 477L...

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Midterm Examination #1 EE 477L University of Southern California February 26, 2008 Name (as known by the university) RA~k)l- - ~--,-,H=------_ Degree Program (BSCENG, BSEE, MSEE, ete.)-----.LH--::.)=---.::l:"--'£=-- _ Instruetions: * The examination is open book and notes. Calculator is allowed but you must tum off your cell phones and put away laptops and other wireless devices. * Please do not write on the backs of the pages. * Note that problems have different point values. * Please show your work. * Be sure to budget your time. Be sure to write your answers in the boxes when they are provided. Assume (unless stated otherwise in each problem): V dd = 2.5 v., V ss = 0 v., V ln = .7 v., Vip = -.7 v V'n(body effect) =.9 v., Vlp(body effect) = -.9 v. Leakage current per transistor = .2 nanw. EO (epsilon) = 8.85 X 10 -14 F/cm and Eoxidc(epsiIon) = 3.9 Rs of silicide = 4 n per 0 (ohms per square). Rs of metall = .08 n per 0 square (ohms per square). Rs of poly = 4.1 n per 0 (ohms per square). Rs of n diffusion =4.7 n per 0 (ohms per square). Rs of p diffusion =3.4 n per 0 (ohms per square). C jbsn = 17.27 X 10- 4 pF 111m2 and Cjbswn = 4.17 x 10- 4 pF 111m (micrometer). C jbsp = 18.8 X 10- 4 pFI I1m 2 and Cjbswp = 3.17 X 10- 4 pFI 11m (micrometer).
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