Midterm
Examination
#1
EE 477L University
of
Southern California
February 26, 2008
Name
(as
known
by the
university)
RA~k)l

S·
~,,H=_
Degree
Program
(BSCENG,
BSEE, MSEE,
ete.).LH::.)=.::l:"'£=
_
Instruetions:
*
The
examination
is
open
book
and notes. Calculator is
allowed
but
you
must
tum
off
your
cell
phones
and
put away laptops
and
other wireless devices.
*
Please do
not
write
on
the
backs
of
the pages.
*
Note
that
problems
have different point values.
*
Please
show
your
work.
*
Be
sure to
budget
your
time.
Be
sure
to
write
your
answers
in
the
boxes
when
they
are
provided.
Assume
(unless stated
otherwise
in each problem):
V
dd
=
2.5
v.,
V
ss
=
0
v.,
V
ln
= .7 v.,
Vip
= .7 v
V'n(body
effect) =.9 v., Vlp(body effect) = .9
v.
Leakage current
per
transistor = .2 nanw.
EO
(epsilon)
= 8.85 X 10 14
F/cm
and
Eoxidc(epsiIon) = 3.9
Rs
of
silicide = 4
n
per
0
(ohms
per
square).
Rs
of
metall
= .08
n
per
0
square
(ohms
per
square).
Rs
of
poly
=
4.1
n
per
0
(ohms per square).
Rs
of
n
diffusion
=4.7
n
per
0
(ohms
per
square).
Rs
of
p
diffusion
=3.4
n
per
0
(ohms
per
square).
C
jbsn
= 17.27
X
10
4
pF
111m2
and
Cjbswn
= 4.17 x
10
4
pF
111m
(micrometer).
C
jbsp
= 18.8
X
10
4
pFI
I1m
2
and
Cjbswp
= 3.17
X
10
4
pFI
11m
(micrometer).
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 Spring '09
 PARKER
 University of Southern California, NMOS Transistor

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