HW1 - Questions - UNIVERSITY OF CALIFORNIA College of...

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UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EE 105 Prof. Salahuddin Fall 2009 Homework Assignment #1 Due at the beginning of class on Tuesday, 9/8/09 Problem 1 [10 points]: Intrinsic Semiconductor Material a) The first transistors were fabricated using germanium (Ge) as the semiconductor material. Ge has a much smaller bandgap energy ( E g,Ge = 0.66 eV) than silicon ( E g,Si = 1.12 eV). Would you expect the intrinsic carrier concentration in a Ge sample to be larger or smaller than that in a Si sample maintained at the same temperature? Explain your answer qualitatively, i.e. without resorting to any equations. b) A semiconductor sample is said to be “intrinsic” if its electron and hole concentrations ( n and p ) under thermal equilibrium conditions ( i.e. with no electric field, magnetic field, or radiation applied) are each equal to -- or approximately equal to -- the intrinsic carrier concentration ( n i ). This is because its electrical conductivity is (approximately) equal to that of an undoped semiconductor sample. A doped semiconductor
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HW1 - Questions - UNIVERSITY OF CALIFORNIA College of...

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