HW2 - Questions

HW2 - Questions - UNIVERSITY OF CALIFORNIA College of...

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UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EE 105 Prof. Salahuddin Fall 2009 Homework Assignment #2 Due at the beginning of class on Tuesday (9/15/2009) Problem 1 [20 points]: P& Junction I-V The minority-carrier diffusion lengths ( L n and L p ) are related to the minority-carrier diffusion constants ( D n and D p , respectively) by the equation τ D L = , where is the minority-carrier lifetime. Consider a PN junction of area 100 μ m 2 formed by locally introducing boron into the surface region of a silicon sample that is uniformly doped with phosphorus, as shown to the right. The minority-carrier lifetime for electrons in the P-type region is n = 0.01 μ s, and the minority-carrier lifetime for holes in the N-type region is p = 1 μ s. The diode is maintained at 300K. a) Calculate the diode saturation current, I S . (Use the mobility curves from Problem 3 of HW#1 to determine the minority carrier mobilities within the quasi-neutral regions, and then use the
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HW2 - Questions - UNIVERSITY OF CALIFORNIA College of...

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