ALD1106-1

2 12 conditions mvc ids on transconductance 30 48 30

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Unformatted text preview: ce 3.0 4.8 3.0 4.8 mA VGS = VDS = 5V G IS 1.0 1.8 1.0 1.8 mmho V DS = 5V IDS = 10mA Mismatch ∆Gfs 0.5 0.5 % Output Conductance G OS 200 200 µmho VDS = 5V IDS = 10mA Ω VDS = 0.1V VGS = 5V % VDS = 0.1V VGS = 5V V IDS = 1.0 µA VGS = 0V 350 Drain Source RDS (ON) On Resistance Drain Source On Resistence Mismatch ∆DS (ON) Drain Source Breakdown Voltage BVDSS 500 350 0.5 500 0.5 12 12 Off Drain Current 1 IDS (OFF) 10 400 4 10 400 4 pA nA VDS =12V VGS = 0V TA = 125°C Gate Leakage Current IGSS 0.1 10 1 0.1 10 1 pA nA VDS = 0V VGS = 12V TA = 125 °C Input Capacitance 2 C ISS 1 3 1 3 pF Notes: 1 2 Consists of junction leakage currents Sample tested parameters ALD1106/ALD1116 Advanced Linear Devices 2 TYPICAL PERFORMANCE CHARACTERISITCS LOW VOLTAGE OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS VGS = 12V VBS = 0V TA = 25°C DRAIN SOURCE CURRENT (µA) DRAIN SOURCE CURRENT (mA) 1000 20 10V 15 8V 10 6V 5 4V 2V 0 0 2 4 6 8 10 VBS = 0V TA = 25°C 500 6V 4V 2V 0 -500 -1000 -160 12 VGS = 12V -80 0 80 160 DRAIN SOURCE VOLTAGE (mV) FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS 20 20 VBS = 0V f = 1KHz 10 DRAIN SOURCE CURRENT (µA) FORWARD TRANSCONDUCTANCE (mmho) DRAIN SOURCE VOLTAGE (V) IDS = 10mA 5 TA = +25°C TA = +125°C 2 1 0.5 IDS = 1mA 0.2 0 2 4 6 VGS = VDS TA = 25°C 15 VBS = 0V -4V -2V -6V 10 -8V -10V 5 -12V 0 8 10 12 0 0.8 1.6 2.4 3.2 GATE SOURCE VOLTAGE (V) DRAIN SOURCE ON RESISTANCE RDS (ON) vs. GATE SOURCE VOLTAGE OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE 100 OFF DRAIN SOURCE CURRENT (pA) DRAIN SOURCE ON RESISTANCE (KΩ) DRAIN SOURCE VOLTAGE (V) VDS = 0.2V VBS = 0V 10 TA = +125°C 1 TA = +25°C 0.1 4.0 0 2 VDS = +12V VGS = VBS = 0V 100 10 1 4 6 8 10 12 -50 -25 0 +25 +50 +75 +100 +125 AMBIENT TEMPERATURE (°C) GATE SOURCE VOLTAGE (V) ALD1106/ALD1116 1000 Advanced Linear Devices 3 ALD1106/ALD1116 Advanced Linear Devices 4...
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