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4902C2009hw6 - EE4902 C2009 HW Set 6 Due in class Friday...

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EE4902 C2009 HW Set 6 Due in class Friday February 27. Assume T =300K. For problems 1-5, use the following MOSFET parameters for minimum length (L=1.6μm) devices in the AMI process: Parameter N-channel P-channel Units V t +0.57 -0.93 V μC ox 7.14E-5 2.40E-5 A/V 2 λ 0.081 0.24 V -1 1) [Op-amp DC, AC analysis] Figure 6-1 below shows a two-stage, low-power op-amp (same as problem 5 from last week). Assume the op-amp is connected so that V in1 , V in2 , and V out all equal +2.5V , and all MOSFETs are in the active operating region. You may assume that the body is tied to the source for all devices (ignore the body effect). Figure 6-1.
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a) Find (again) the DC operating point (drain current I D [to an accuracy of ±10%] and gate- source voltage V GS [to an accuracy of ±0.01V]) for all MOSFETs. b) Assuming a DC bias condition with all devices operating in the active region, draw the small-signal model of this op-amp in the general cascade-of-two-stages format we've been using. Assuming the op-amp is uncompensated (C comp =0), find numerical values for G mI , R oI , C I , and G
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