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EE4902 C2009
HW Set 6
Due in class Friday February 27. Assume T =300K. For problems 15, use the following
MOSFET parameters for minimum length (L=1.6μm) devices in the AMI process:
Parameter
Nchannel
Pchannel
Units
V
t
+0.57
0.93
V
μC
ox
7.14E5
2.40E5
A/V
2
λ
0.081
0.24
V
1
1)
[Opamp DC, AC analysis]
Figure 61 below shows a twostage, lowpower opamp (same as problem 5 from last
week).
Assume the opamp is connected so that V
in1
, V
in2
, and V
out
all equal +2.5V
,
and all MOSFETs are in the active operating region. You may assume that the body is
tied to the source for all devices (ignore the body effect).
Figure 61.
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View Full Document a)
Find (again) the DC operating point (drain current I
D
[to an accuracy of ±10%] and gate
source voltage V
GS
[to an accuracy of ±0.01V]) for all MOSFETs.
b)
Assuming a DC bias condition with all devices operating in the active region, draw the
smallsignal model of this opamp in the general cascadeoftwostages format we've been
using. Assuming the opamp is uncompensated (C
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This note was uploaded on 10/13/2009 for the course ECE 4902 taught by Professor Mcneill during the Spring '01 term at WPI.
 Spring '01
 MCNEILL
 Integrated Circuit

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