Studio_2

Studio_2 - 1 Studio 2 Review • Motion of carriers in...

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Unformatted text preview: 1 Studio 2 Review • Motion of carriers in semiconductor: Mobility μ • Channel: Accumulation, Depletion, Inversion • Threshold voltage V TH • Gate-source overdrive voltage V GS-V TH • V-I characteristic of MOSFET channel Small V DS : D-S channel looks like resistance R on • Overdrive voltage V GS-V TH controls R on resistance • Lab exercise: extract V TH , mobility μ • Text: Razavi sec. 2.1, 2.2, 2.3 J&M Sec 1.2, 1.7 2 Motion of carriers due to electric Feld ¡ree Space Semiconductor Lattice 3 Mobility • Velocity with collisions “averaged out” 4 Mobility: Units, typical Values LOW FIELD REGION ! = μ " HIGH FIELD REGION ! = ! sat MAXIMUM ("SATURATION") VELOCITY ! sat ! 1E+7 cm/sec ! 100 " m/nsec ! 1E+5 V/cm ! 10 V/ " m 5 Mobility: Units, Typical Values • ! =μ " # μ= ! / " # cm 2 /V•sec • Surface mobility: e- μ n ! 600 cm 2 /V•sec hole μ p ! 200 cm 2 /V•sec • Velocity saturation important for short (<1μm) channel MOSFETs (see Razavi sec. 16.2) 6 Channel V GS = 0 • N-channel MOSFET 7...
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This note was uploaded on 10/13/2009 for the course ECE 4902 taught by Professor Mcneill during the Spring '01 term at WPI.

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Studio_2 - 1 Studio 2 Review • Motion of carriers in...

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