Studio_2 - Studio 2 Review Motion of carriers in...

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1 Studio 2 Review Motion of carriers in semiconductor: Mobility μ Channel: Accumulation, Depletion, Inversion Threshold voltage V TH Gate-source overdrive voltage V GS -V TH V-I characteristic of MOSFET channel Small V DS : D-S channel looks like resistance R on Overdrive voltage V GS -V TH controls R on resistance Lab exercise: extract V TH , mobility μ Text: Razavi sec. 2.1, 2.2, 2.3 J&M Sec 1.2, 1.7
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2 Motion of carriers due to electric field Free Space Semiconductor Lattice
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3 Mobility Velocity with collisions “averaged out”
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4 Mobility: Units, typical Values LOW FIELD REGION ! = μ " HIGH FIELD REGION ! = ! sat MAXIMUM ("SATURATION") VELOCITY ! sat ! 1E+7 cm/sec ! 100 " m/nsec ! 1E+5 V/cm ! 10 V/ " m
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5 Mobility: Units, Typical Values ! " # μ= ! / " # cm 2 /V•sec Surface mobility: e- μ n ! 600 cm 2 /V•sec hole μ p ! 200 cm 2 /V•sec Velocity saturation important for short (<1μm) channel MOSFETs (see Razavi sec. 16.2)
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6 Channel V GS = 0 N-channel MOSFET
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7 Channel V GS < 0 : Accumulation Accumulate excess holes at surface Channel even more p-type: "wrong way" ++++++
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