doping cases handout

doping cases handout - i>> |N D-N A | n = N D − N A 2...

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
EE3901 n, p Carrier Concentration Approximations Case 1: Intrinsic Semiconductor (N A =0, N D =0) n = N D N A 2 + N D N A 2 2 + n i 2 p = N A N D 2 + N A N D 2 2 + n i 2 Case 2a: Semiconductor Doping dominated by Donors (N D >>N A , N D >>n i ) n = N D N A 2 + N D N A 2 2 + n i 2 p = N A N D 2 + N A N D 2 2 + n i 2 Case 2b: Semiconductor Doping dominated by Acceptors (N A >>N D , N A >>n i ) n = N D N A 2 + N D N A 2 2 + n i 2 p = N A N D 2 + N A N D 2 2 + n i 2 Case 3: Doped Semiconductor at High Temperature (n
Background image of page 1
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: i >> |N D-N A | ) n = N D − N A 2 + N D − N A 2 ⎛ ⎝ ⎞ ⎠ 2 + n i 2 p = N A − N D 2 + N A − N D 2 ⎛ ⎝ ⎞ ⎠ 2 + n i 2 Case 4: Compensated Semiconductor (N A , N D comparable) n = N D − N A 2 + N D − N A 2 ⎛ ⎝ ⎞ ⎠ 2 + n i 2 p = N A − N D 2 + N A − N D 2 ⎛ ⎝ ⎞ ⎠ 2 + n i 2...
View Full Document

This note was uploaded on 10/13/2009 for the course ECE 3901 taught by Professor Aboud during the Spring '09 term at WPI.

Ask a homework question - tutors are online