molecular

molecular - Nanoscale molecular-switch devices fabricated...

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Unformatted text preview: Nanoscale molecular-switch devices fabricated by imprint lithography Yong Chen, a) Douglas A. A. Ohlberg, Xuema Li, Duncan R. Stewart, and R. Stanley Williams Quantum Science Research, Hewlett-Packard Laboratories, 1501 Page Mill Road, MS1123, Palo Alto, California 94304 Jan O. Jeppesen, b) Kent A. Nielsen, b) and J. Fraser Stoddart Department of Chemistry and Biochemistry and The California NanoSystems Institute, 603 Charles E. Young East Drive, University of California, Los Angeles, California 90095-1596 Deirdre L. Olynick and Erik Anderson MS 02-400, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 ~ Received 30 August 2002; accepted 16 January 2003 ! Nanoscale molecular-electronic devices comprising a single molecular monolayer of bistable @ 2 # rotaxanes sandwiched between two 40-nm metal electrodes were fabricated using imprint lithography. Bistable currentvoltage characteristics with high onoff ratios and reversible switching properties were observed. Such devices may function as basic elements for future ultradense electronic circuitry. 2003 American Institute of Physics. @ DOI: 10.1063/1.1559439 # Molecular electronics offers the tantalizing prospect of eventually building circuits with critical dimensions of a few nanometers. Some basic devices utilizing molecules have been demonstrated, including tunnel junctions with negative differential resistance, 1 rectifiers, 2 and electrically config- urable switches that have been used in simple electronic memoryand logic circuits. 3,4 A major challenge that remains is to show that such devices can be fabricated economically using a process that will scale to circuits with large numbers of elements while maintaining their desired electronic prop- erties. Previous nanoscale molecular devices have been fabri- cated using e-beam lithography, 1,4 which is impractical for commercial applications because of the slow writing speed. High-energy electron beams can also damage the active mol- ecules in a circuit. In contrast, imprint lithography is a pro- cessing technique that can produce sub-10-nm feature sizes, high throughput, and low cost. 5 In addition, imprinting may also preclude damage to the active molecules in a circuit from high-energy electrons during e-beam lithography. In this letter, we describe an imprinting process to fabricate nanoscale molecular devices 6 from an amphiphilic, bistable @ 2 # rotaxane, and demonstrate that these devices act as revers- ible, electrically toggled switches. The imprinting mold was fabricated into a 100-nm-thick, thermally grown silcon oxide on a silicon substrate using electron-beam lithography and reactive-ion etching ~ RIE !...
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This note was uploaded on 10/13/2009 for the course ECE 3901 taught by Professor Aboud during the Spring '09 term at WPI.

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molecular - Nanoscale molecular-switch devices fabricated...

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