EE3113_A2009_L19

EE3113_A2009_L19 - ECE 3113 INTRODUCTION INTO RF CIRCUIT...

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ECE 3113 INTRODUCTION INTO RF CIRCUIT DESIGN Lecture Notes for A-term 2009 LECTURE 19 Prof. R. Ludwig Department of Electrical and Computer Engineering Worcester Polytechnic Institute Worcester, MA 01609 copyright © 2009, R. Ludwig Copyright, 1998 © R. Ludwig
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ECE3113_L19 2 Objectives • What types of transistors are available? • What are large and small signal models? • How are the S-parameters obtained form a real device?
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ECE3113_L19 3 RF Transistors • BJT: low noise, linear power amplification, power applications (bipolar operation) • GaAs FET: very low noise, low power (monopolar operation) • HEMT (High electron mobility transistor): very high frequency (f > 20 GHz) (electron gas)
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ECE3113_L19 4 • Major issue when dealing with RF transistors: NOISE – shot noise in emitter-base – shot noise in collector system – thermal noise in base resistance • How to reduce noise – minimize current flow across pn-junction – minimize resistance • Solution – Finger structure of base, emitter configuration
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ECE3113_L19 5 Finger structure of BJT Cross-sectional view Top-down view (see pp. 325 - 342)
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ECE3113_L19 6 Functionality of BJT
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ECE3113_L19 7 Structure of MESFET (see pp. 344 - 355) Functionality of MESFET
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EE3113_A2009_L19 - ECE 3113 INTRODUCTION INTO RF CIRCUIT...

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