EE3113_A2009_L27

EE3113_A2009_L27 - ECE 3113 INTRODUCTION TO RF CIRCUIT...

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ECE 3113 INTRODUCTION TO RF CIRCUIT DESIGN Lecture Notes for A-term 2009 Amplifier Design Project Prof. R. Ludwig Department of Electrical and Computer Engineering Worcester Polytechnic Institute Worcester, MA 01609 copyright © 2009, R. Ludwig Copyright, 1998 © R. Ludwig
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2 Specifications • Design an amplifier which achieves exactly 13 dB gain (use the unilateral transducer gain approach) • The amplifier has to operate at 1 GHz • The operating point for the collector current should not exceed 60 mA. Approach • Select BJT and pick optimal DC operating conditions • At 1 GHz (and based on the DC conditions) find the S- parameters • Determine the maximum power gain (source side, transistor, load side) • Design the matching networks by assigning to each matching network the appropriate gain • Investigate the overall design in ADS
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3 DC analysis and S-parameter recording (in ADS)
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SELECT RF BJT Pick a Motorola device with an f T of 4.5 GHz, h fe = 90, 2.5 W. Decide on the recommended
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This note was uploaded on 10/13/2009 for the course ECE 3113 taught by Professor Ludwig during the Spring '09 term at WPI.

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EE3113_A2009_L27 - ECE 3113 INTRODUCTION TO RF CIRCUIT...

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