hw11_solutions - ECE 440 HW XI Solutions Spring 2008 1. A...

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ECE 440 HW XI Solutions Spring 2008 1. A newly fabricated silicon p-n junction in the ECE440 lab is to be characterized under forward biasing. The uncompensated doping concentrations in the p and n side are N a =3x10 17 /cm 3 and N d =1x10 17 /cm 3 , respectively. For both sides, carrier lifetimes are found to be tn=tp=1µs. The junction area is A=10 -4 cm 2 . Assume that there exists a net parasitic resistance of 200Ω due to the metal contacts and the series resistance in the test circuit as shown below. If the diode behaves as an ideal diode and practically no electric field exists in the quasi-neutral region beyond the depletion region of the p-n junction, determine and plot the current vs. the voltage of the external power supply for V Power Supply from 0 to 5V in a linear-linear plot. The I-V characteristics of an ideal diode are . However, in this setup there is an additional resistor in our circuit. A combination of the ideal diode equation along with a KVL loop for this circuit will give the I-V response. V d in the above equations represents the voltage dropped across the diode whereas V refers to the power supply voltage. In the circuit world, this equation is know as a load line, and refers to the external “load” imposed on the device. By setting both
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This note was uploaded on 10/14/2009 for the course ECE 440 taught by Professor Lie during the Spring '09 term at University of Illinois at Urbana–Champaign.

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hw11_solutions - ECE 440 HW XI Solutions Spring 2008 1. A...

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