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# hw10 - ECE 3150 Homework 10 Due in the drop box Multiple...

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ECE 3150 Homework 10 Due 5/1/2009 in the drop box Multiple Choice (3 pts each) For all multiple-choice problems below, we will use the CMOS parameters as k n = μ n C ox = 0.2mA/V 2 , k p = μ p C ox = 0.1mA/V 2 , and V thn =|V thp | = 0.7V. V DD = 5V and the Early effect is negligible. 1. For the CMOS inverter given below with (W/L) PMOS =2 and (W/L) NMOS =1, if v IN =0.7V, what is a good approximation of v OUT in the steady state? (a) 0.0V; (b) 0.7V; (c) 1.0V; (d) 2.5V; (e) 4.0V; (f) 4.3V ; (g) 5V. 2. Following Problem 1, if v IN =2.5V, what is a good approximation of v OUT in the steady state? (a) 0.0V; (b) 0.7V; (c) 1.0V; (d) 2.5V; (e) 4.0V; (f) 4.3V ; (g) 5V. 3. Following Problem 1, if v IN changes from 5V to 0V at t = 0, what is a good approximation for the time constant (minimal value) when v OUT 2245 5V? Assume that only the load capacitance C L needs to be considered. (a) 0.2ps; (b) 20ps; (c) 2ns; (d) 200ns; (e) 20 μ s; (f) 2ms; (g) 200ms. 4. If now (W/L) PMOS =1 and (W/L) NMOS =2, if v IN =2.5V, what is a good approximation of v OUT in the steady state? (a) 0.0V; (b) 2.5V ; (c) 5.0V ; (d) cannot be determined. 5. For the pseudo-NMOS inverter given below with (W/L) PMOS = 2 and (W/L) NMOS = 1, now if v IN = 5.0V, what is a good approximation of v OUT in the steady state? (a) 0.0V; (b) 0.7V; (c) 1.0V; (d) 2.5V; (e) 4.0V; (f) 4.3V ; (g) 5V. 6. For the pass transistor logic below, what is the closest logical function implemented in Circuit A? (a) A(B+C) ; (b) A+BC ; (c) ABC ; (d) A+B+C ; (e) ) ( C B A + ; (f) BC A + ; (g) ABC . 7. For V DD =5V, V thn =1V and the signals ( A, B, C ) have strong “1” at full V DD values, what is the highest voltage V OUT can achieve in Circuit A in reasonable transit time? (a) 5.0V; (b) 4.5V; (c) 4.0V; (d) 3.5V; (e) 3.0V; (f) 2.5V; (g) 2.0V; (h) 1.5V.

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