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ECE 3150 Homework 10
Due 5/1/2009
in the drop box
Multiple Choice (3 pts each)
For all multiplechoice problems below, we will use the CMOS parameters as
k
n
’
=
μ
n
C
ox
= 0.2mA/V
2
,
k
p
’
=
p
C
ox
= 0.1mA/V
2
, and
V
thn
=V
thp

= 0.7V.
V
DD
= 5V and the Early effect is negligible.
1.
For the CMOS inverter given below with
(W/L)
PMOS
=2 and
(W/L)
NMOS
=1, if
v
IN
=0.7V, what is a good
approximation of
v
OUT
in the steady state?
(a) 0.0V;
(b) 0.7V;
(c) 1.0V;
(d) 2.5V; (e) 4.0V;
(f)
4.3V ; (g) 5V.
2.
Following Problem 1, if
v
IN
=2.5V, what is a good approximation of
v
OUT
in the steady state? (a) 0.0V;
(b) 0.7V;
(c) 1.0V;
(d) 2.5V; (e) 4.0V;
(f) 4.3V ; (g) 5V.
3.
Following Problem 1, if
v
IN
changes from 5V to 0V at
t
= 0, what is a good approximation for the time
constant (minimal value) when
v
OUT
2245
5V?
Assume that only the load capacitance
C
L
needs to be
considered.
(a) 0.2ps; (b) 20ps; (c) 2ns; (d) 200ns; (e) 20
μ
s; (f) 2ms; (g) 200ms.
4.
If now
(W/L)
PMOS
=1 and
(W/L)
NMOS
=2, if
v
IN
=2.5V, what is a good approximation of
v
OUT
in the steady
state? (a) 0.0V; (b) 2.5V ; (c) 5.0V ; (d) cannot be determined.
5.
For the pseudoNMOS inverter given below with
(W/L)
PMOS
= 2 and
(W/L)
NMOS
= 1, now if
v
IN
= 5.0V,
what is a good approximation of
v
OUT
in the steady state?
(a) 0.0V;
(b) 0.7V;
(c) 1.0V;
(d) 2.5V;
(e) 4.0V;
(f) 4.3V ; (g) 5V.
6.
For the pass transistor logic below, what is the closest logical function implemented in Circuit A?
(a)
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 Microelectronics

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