HW_7 - e s ( t ) = 0 to determine the quiescent point...

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EE438 Homework #7 Graphical Analysis of a Transistor Circuit The i B vs. v BE base characteristic and the i C vs. v CE collector characteristics for the 2N2222A BJT in the circuit below are given on the next two pages. These characteristic curves are to be used in a graphical analysis of the circuit. Note that there are two voltage sources in the base circuit of the BJT. One is a DC bias source with terminal voltage V BB . The other is a sinusoidal AC signal source with terminal voltage expressed by ( )( ft t e s ) π 2 sin 2 . 0 = Volts. 1. With e s ( t ) = 0 perform a graphical analysis to determine the Quiescent point (Q-point) values I B0 , V BE0 , I C0 , V CE0 for a) V BB = 1.0V; b) V BB = 1.4V; c) V BB = 0.6V. 2. With () t t e s ω sin 2 . 0 = perform a graphical analysis to determine the peak-to-peak values of v CE ( t ) for a) V BB = 1.0V; b) V BB = 1.4V; c) V BB = 0.6V. 3. Use the Multisim simulator to analyze the circuit below with
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Unformatted text preview: e s ( t ) = 0 to determine the quiescent point (Q-point) values I B0 , V BE0 , I C0 , V CE0 for a) V BB = 1.0V; b) V BB = 1.4V; c) V BB = 0.6V. 4. With ( ) ( ) ft t e s 2 sin 2 . = analyze the circuit below with the Multisim simulator to determine the peak-to-peak values of v CE ( t ) for a) V BB = 1.0V; b) V BB = 1.4V; c) V BB = 0.6V. Use f = 1kHz for the Multisim simulation. _ + V CC =10V V BB R C =2.5k R B =40k e s ( t )=0.2sin( 2 ft ) 2N2222A 2N2222A Base Characteristic 5 10 15 20 25 30 35 40 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 v BE- Volts i B- A 2N2222A Collector Characteristics 1 2 3 4 5 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 v CE- Volts i C- mA IB=2 A 4 A 6 A 8 A 10 A 12 A 14 A 16 A 20 A 18 A...
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This note was uploaded on 10/26/2009 for the course EE 438 taught by Professor Cardwell during the Spring '08 term at University of Texas at Austin.

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HW_7 - e s ( t ) = 0 to determine the quiescent point...

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