{[ promptMessage ]}

Bookmark it

{[ promptMessage ]}

# HW_20 - I = 20 µ A and V DD = V SS = 5 V Neglecting the...

This preview shows pages 1–2. Sign up to view the full content.

EE 438 Homework #20 The two BJT’s in the differential amplifier circuit in Fig. 1 are identical. Their parameters are I S = 10 -15 A, β = 100 , V A . The parameters for the MOSFETs in the differential amplifier circuit in Fig. 2 are NMOS: k n = 20 µ A/V 2 , W = 200 µ m, L = 10 µ m, V tn = 1 V, λ = 0.04 V -1 PMOS: k p = 10 µ A/V 2 , W = 100 µ m, L = 10 µ m, V tp = -1 V, λ = 0.04 V -1 1. In the differential amplifier circuit of Fig. 1 let I = 1 mA, R C = 5k , R E = 200 , and V CC = V EE = 5 V. Perform a DC analysis using the expression (use V T BE V V S C e I I / = T = 25.88 mV) to find the voltages (a) V E1 , (b) V X , and (c) V C1 . Also, determine (d) g m , and (e) r e . 2. Use a small signal equivalent of the circuit in Problem 1 with the values of g m and r e determined in that problem to find (a) the differential voltage gain, 2 1 2 1 i i c c v v v A = v v , and (b) the differential input resistance, R id . 3. In the MOSFET differential amplifier circuit of Fig. 2 let

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document