EE 438 Homework #20 The two BJT’s in the differential amplifier circuit in Fig. 1 are identical. Their parameters are IS= 10-15 A, β= 100, VA→∞. The parameters for the MOSFETs in the differential amplifier circuit in Fig. 2 are NMOS: kn’= 20 µA/V2, W= 200 µm, L= 10 µm, Vtn= 1 V, λ= 0.04 V-1PMOS: kp’= 10 µA/V2, W= 100 µm, L= 10 µm, Vtp= -1 V, λ= 0.04 V-1 1.In the differential amplifier circuit of Fig. 1 let I= 1 mA, RC= 5kΩ, RE= 200 Ω,and VCC= VEE= 5 V. Perform a DC analysis using the expression (use VTBEVVSCeII/=T= 25.88 mV) to find the voltages (a)VE1, (b) VX, and (c)VC1. Also, determine (d)gm, and (e)re. 2.Use a small signal equivalent of the circuit in Problem 1 with the values of gmand redetermined in that problem to find (a)the differential voltage gain,2121iiccvvvA−=vv−, and (b)the differential input resistance, Rid. 3.In the MOSFET differential amplifier circuit of Fig. 2 let
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