Presentation 6 diffusion_II

Presentation 6 diffusion_II - Resistivity/Conductivity...

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Resistivity/Conductivity ρ=σ 1 = q µ n n + µ p p ( ) [] 1 n type : ρ≅ q n N D N A () 1 p q p N A N D 1 C x F out F in in J out J N • Resistivity e e e e e e N q A N q L R A L R I V R A N q L V I ρ 1 , = = > −− < = = = L Conductor Semiconductor ρ = ρ /x x j b) R = ρ a)
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PN Junction Formation doping) type - n out cancels doping type - p e. (i. zero is ion concentrat impurity net the where point at the occurs junction n - P Depth Junction cal Metallurgi j j x x = = = B 0 1 - B 0 N N erfc 2 : profile Function Error N N ln 2 : Profile Gaussian Dt x Dt x j j () = Dt x erfc N t x N 2 , : Source Constant 0 = 2 0 2 exp , : Dosage Constant Dt x N t x N
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PN Junction Formation = = B 0 1 - B 0 N N erfc 2 : profile Function Error N N ln 2 : Profile Gaussian Dt x Dt x j j ρ=σ 1 = q µ n n + µ p p ( ) [ ] 1 n type : ρ≅ q n N D N A () [] 1 p q p N A N D 1
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A boron diffusion is used to form the base region of an npn transistor in a 0.18 -cm n-type silicon wafer.
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This note was uploaded on 10/27/2009 for the course ENGR MSE 401 50 taught by Professor Drwang during the Fall '09 term at LA Tech.

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Presentation 6 diffusion_II - Resistivity/Conductivity...

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